參數(shù)資料
型號(hào): MBR25100CT
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 25 AMPS. Schottky Barrier Rectifiers
中文描述: 25安培。肖特基
文件頁數(shù): 1/2頁
文件大?。?/td> 98K
代理商: MBR25100CT
MBR2520
THRU
MBR25100
25 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
Features
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MBR2520 MBR2520 20V 14V 20V
MBR2530 MBR2530 30V
MBR 2535 MBR2535 35V 24.5V 35V
MBR2540 MBR2540 40V
MBR2545 MBR2545 45V
MBR2560 MBR2560 60V
MBR2580 MBR2580 80V
21V 30V
28V 40V
31.5 45V
42V 60V
56V 80V
MBR25100 MBR25100 100V
70V 100V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
25A
T
C
= 130
°
C
Peak Forward Surge
Current
I
FSM
150A
8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element
MBR2020-2045
MBR2060
MBR2080-20100
V
F
.63V
.
75
V
I
FM
= 25A per
element;
T
A
= 25
°
C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
*Pulse test: Pulse width 300
μ
sec, Duty cycle 1%
INCHES MM
A .595 .620 15.11 15.75
B .380 .405 9.65 10.29
C .160 .190 4.06 4.82
D .025 .035 0.64 0.89
F .142 .147 3.61 3.73
G .190 .210 4.83 5.33
H .110 .130 2.79 3.30
J .018 .025 0.46 0.64
K .500 .562 12.70 14.27
L .045 .060 1.14 1.52
Q .100 .120 2.54 3.04
R .080 .110 2.04 2.79
S .045 .055 1.14 1.39
T .235 .255 5.97 6.48
G
R
B
Q
H
U
L
D
C
J
K
A
F
S
T
U ------ .050 ----- 1.27
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mc c semi
.c om
TO-220AC
.
84
V
0.2mA T
J
= 25
°
C
omp
onents
21201 Itasca Street Chatsworth
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