參數(shù)資料
型號: MBR20U150CT
元件分類: 整流器
英文描述: 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 24K
代理商: MBR20U150CT
2009. 3. 2
1/1
SEMICONDUCTOR
TECHNICAL DATA
MBR20U150CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
Average Output Rectified Current
: IO=20A.
Repetitive Peak Reverse Voltage
: VRRM=150V.
Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25
)
DIM MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+_
2.8 0.1
+_
2.54 0.2
+_
1.27 0.1
+_
1.4 0.1
+_
13.08 0.3
+_
3.6 0.2
+_
9.9 0.2
+_
9.2 0.2
+_
4.5 0.2
+_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
E
I
O
C
H
NN
Q
D
Q
P
1. ANODE
2. CATHODE
3. ANODE
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
150
V
Average Output Rectified
Current (Note)
IO
20
A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
180
A
Junction Temperature
Tj
-40
- 150
Storage Temperature Range
Tstg
-55
- 150
Note : average forward current of centertap full wave connection.
3
1
2
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
(Note)
VFM
IFM=10A
-
0.90
V
Repetitive Peak
Reverse Current
(Note)
IRRM
VRRM=Rated
-
50
§
Reverse Recovery Time
(Note)
trr
IF=1.0A, di/dt=-30A/§
-
35
ns
Thermal Resistance
(Note)
Rth(j-c)
Juction to Case
-
1.5
/W
Note : A value of one cell
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