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參數(shù)資料
| 型號： | MBR20H100CT |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | MBR20H100CT |
MBR20H100CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 100 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
250
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
TC =125 C
MBR20H100CT
100
70
100
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
REV. 1, Aug-2007, KTHC39
TJ
Operating Temperature Range
-65 to +175
C
TSTG
Storage Temperature Range
-65 to +175
C
Typical Thermal Resistance (Note 2)
R0JC
1.4
C/W
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
5
uA
mA
Maximum Forward
Voltage (Note 1)
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
V/us
0.77
0.64
0.88
0.73
Typical Junction Capacitance
per element (Note 3)
CJ
300
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR20H100CT/45 | 功能描述:肖特基二極管與整流器 20 Amp 100 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR20H100CT_09 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20.0 AMPS. Schottky Barrier Rectifiers |
| MBR20H100CT_10 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20.0 AMPS. Schottky Barrier Rectifiers |
| MBR20H100CT_11 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20.0AMPS. Schottky Barrier Rectifiers |
| MBR20H100CT_13 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection |
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