參數(shù)資料
型號： MBR2060CT
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 整流器
英文描述： 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/3頁
文件大小： 80K
代理商： MBR2060CT
MBR2030CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
MBR
2030CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
dv/dt
0.65
0.57
0.84
0.72
IR
@TJ =100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
TC =125 C
V/us
MBR
2035CT
35
24.5
35
MBR
2040CT
40
28
40
MBR
2045CT
45
31.5
45
MBR
2050CT
50
35
50
MBR
2060CT
60
42
60
10000
0.80
0.70
0.95
0.85
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 2)
CJ
300
400
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
TJ =25 C
SEMICONDUCTOR
LITE-ON
REV. 6, Oct-2010, KTHC08
相關(guān)PDF資料
PDF描述
MBR2030CT 20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR2050PT 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR2035PT 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR2045PT 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR2060CTE3 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
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