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參數(shù)資料
| 型號： | MBR2045CT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Power Rectifier(20A,45V肖特基勢壘功率整流器) |
| 中文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 65K |
| 代理商： | MBR2045CT |
MBR2045CT
http://onsemi.com
5
r
(
0.01
0.1
1.0
10
100
0.05
0.03
0.02
0.01
0.1
0.07
t, TIME (ms)
0.5
0.3
0.2
1.0
0.7
P
pk
P
pk
t
p
t
1
TIME
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
, is peak of an
equivalent square power pulse.
T
JL
= P
pk
R
JL
[D + (1 D)
r(t
1
+ t
p
) + r(t
p
) r(t
1
)] where:
T
JL
= the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t
1
+ t
p
) = normalized value of transient thermal resistance at time,
t
1
+ t
p
, etc.
1000
Figure 9. Thermal Response
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For exam-
ple, relative waveform rectification efficiency is approxi-
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas
perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in
waveform efficiency is not indicative of power loss; it is
simply a result of reverse current flow through the diode ca-
pacitance, which lowers the dc output voltage.
2.0 s
1.0 kHz
12 V
100
V
CC
12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
010 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
+150 V, 10 mAdc
4.0 F
+
V
R
, REVERSE VOLTAGE (VOLTS)
1000
500
300
0
0
50
700
C
Figure 10. Typical Capacitance
10
20
30
200
40
Figure 11. Test Circuit for dv/dt and Reverse Surge Current
T
J
= 25
°
C
f = 1 MHz
100
600
400
800
900
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR2045CT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR2045CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 45V 20A 3-Pin(3+Tab) TO-220AB Tube 制造商:Taiwan Semiconductor 功能描述: 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 45V 20A 3-Pin(3+Tab) TO-220AB Tube |
| MBR2045CT/45 | 功能描述:肖特基二極管與整流器 20 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR2045CT_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier |
| MBR2045CT_B0_10001#DELETED BY PJT# | 制造商:PanJit Touch Screens 功能描述: |
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