參數(shù)資料
型號(hào)： MBR20035CT
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 整流器
英文描述： 100 A, 35 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 117K
代理商： MBR20035CT
ROHS Compliant
copper
Baseplate: Nickel plated
Baseplate
A=Common Anode
Baseplate
Common Cathode
Baseplate
D=Doubler
CPT20130 - CPT20145
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
200 Amps
100 Amps
2000 Amps
2 Amps
0.68 Volts
0.64 Volts
4.0mA
5500pF
Thermal and Mechanical Characteristics
Schottky PowerMod
1100mA
Average forward current per pkg
Average forward current per leg
Maximum surge current per leg
Max peak forward voltage per leg
Max peak reverse current per leg
Typical junction capacitance
Maximum repetitive reverse current per leg
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Weight
center hole must be torqued first
Mounting Base Torque (center hole)
OJC
OCS
STG
R
TJ
T
CJ
F(AV)
FSM
RM
R(OV)
I
FM
V
I
FM
V
I
F(AV)
I
H
Q
40V
35V
30V
45V
Working Peak
Reverse Voltage
*Add Suffix A for Common Anode, D for Doubler
CPT20140*
CPT20135*
CPT20130*
CPT20145*
Microsemi
Catalog Number
V
U
N
W
F
Reverse Voltage
Repetitive Peak
E
40V
35V
30V
45V
Notes:
U
C
B
G
R
A
C = 99°C, Square wave,
0JC = .40°C/W
C = 99°C, Square wave,
0JC = .20°C/W
30-40 inch pounds
2.8 ounces (75 grams) typical
8-10 inch pounds
T
8.3ms, half sine,
J = 125°C
f = 1 KHZ, 25°C
FM = 200A:
J = 25°C*
FM = 200A:
J = 125°C*
RRM,
J = 125°C*
RRM,
J = 25°C
R = 5.0V,
C = 25°C
35-50 inch pounds
-55°C to 150°C
Junction to case
Case to sink
0.40°C/W
0.08°C/W
V
T
V
I
T
R
1/4-28
Dia.
Notes
92.20
A
3.630
---
3.150 BSC
---
0.510
0.130
0.800
0.630
---
0.290
0.340
0.195
200 Amperes/30 to 45 Volts
Schottky Barrier Rectifier
Guard Ring Protection
Reverse Energy Tested
150° C Junction Temperature
0.312
0.180
0.600
V
W
U
---
0.275
Q
R
N
1.375 BSC
E 0.120
0.010
0.490
G
H
F
---
0.700
C
B
80.01 BSC
34.92 BSC
---
15.24
7.92
4.57
6.99
12.45
3.05
---
17.78
0.25
---
7.37
8.64
4.95
12.95
3.30
20.32
16.00
---
Dim. Inches
Max.
---
Min.
Millimeters
---
Min.
Max.
Part Number
MBR20030CT
200CNQ035
Industry
224CNQ035
MBR20035CT
200CNQ040
224CNQ040
MBR20040CT
200CNQ045
224CNQ045
MBR20045CT
January, 2010 - Rev. 4
www.microsemi.com
相關(guān)PDF資料
PDF描述
MBR20030CT 100 A, 30 V, SILICON, RECTIFIER DIODE
MBR20100CTW 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR20120CE 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA
MBR20120CT-1 10 A, SILICON, RECTIFIER DIODE, TO-262AA
MBR20120CT-G 10 A, SILICON, RECTIFIER DIODE, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR20035CTR 功能描述:肖特基二極管與整流器 35V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR20035R 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 200A
MBR20040 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 200A
MBR20040CT 功能描述:肖特基二極管與整流器 40V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR20040CTR 功能描述:肖特基二極管與整流器 40V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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