參數(shù)資料
型號: MBR160G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Axial Lead Rectifiers
中文描述: 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41
封裝: LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 74K
代理商: MBR160G
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 8
1
Publication Order Number:
MBR150/D
MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a
large area metaltosilicon power diode. Stateoftheart geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in lowvoltage,
highfrequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are PbFree Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
MBR150
MBR160
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
50
60
V
RMS Reverse Voltage
MBR150
MBR160
35
42
V
Average Rectified Forward Current (Note 1)
(V
R(equiv)
0.2 V
R
(dc), T
L
= 90
°
C,
R
JA
= 80
°
C/W, P.C. Board Mounting, T
A
= 55
°
C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
L
= 70
°
C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
I
O
1.0
A
I
FSM
25
(for one
cycle)
A
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
(Notes 1 and 2)
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, JunctiontoAmbient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32
from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
R
JA
80
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE 50 AND 60 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
MARKING DIAGRAM
A
MBR1x0 = Device Code
x = 5 or 6
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
A
MBR1x0
YYWW
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
DO41
AXIAL LEAD
CASE 59
STYLE 1
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