參數(shù)資料
型號: MBR1535CT-1-G
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: 7.5 A, SILICON, RECTIFIER DIODE, TO-262AA
封裝: GREEN, PLASTIC, TO-262, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 307K
代理商: MBR1535CT-1-G
SENSITRON
SEMICONDUCTOR
Technical Data
Green Products
Data Sheet 3
456, Rev. A
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR1535/1545CT-G
MBRB1535/1545CT-G
MBR1535/1545CT-1-G
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Unit
s
35
MBR1535CT-G
MBRB1535CT-G
MBR1535CT-1-G
Peak Inverse Voltage
VRWM
-
45
MBR1545CT-G
MBRB1545CT-G
MBR1545CT-1-G
V
7.5(per leg))
Max. Average Forward
Current
IF(AV)
50% duty cycle @TC = 105°C,
rectangular wave form
15(per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine pulse
180
A
Peak Repetitive Reverse
Surge Current
IRRM
2.0μsec 1.0KHz
1.0
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 15A, Pulse, TJ = 25
°C
0.84
V
VF2
@ 15A, Pulse, TJ = 125
°C
0.72
V
Max. Reverse Current
(per leg) *
IR1
@VR = rated VR Pulse
TJ = 25
°C
1.0
mA
IR2
@VR = rated VR , Pulse
TJ = 125
°C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C fSIG = 1MHz
VSIG =50(p-p)
400
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,00
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-65 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
3.0
°C/W
Typical Thermal Resistance
Case to Heat Sink
RθCS
Mounting surface,
smooth and greased
0.50
°C/W
Maximum Thermal
Resistance Junction
RθJA
DC operation
60
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
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