參數(shù)資料
型號: MBR120VLSFT3G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 1 A, 20 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, PLASTIC, CASE 498-01, 2 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 69K
代理商: MBR120VLSFT3G
MBR120VLSFT1
http://onsemi.com
4
C
12
0
V
R
, REVERSE VOLTAGE (VOLTS)
500
100
0
4
8
T
J
= 25
°
C
20
16
Figure 7. Capacitance
T
J
,
T
°
C
12
0
V
R
, DC REVERSE VOLTAGE (VOLTS)
125
120
100
95
65
6.0
2.0
4.0
8.0
10
20
14
16
18
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
70
75
80
85
90
105
110
115
R
JA
= 25.6
°
C/W
400
°
C/W
324.9
°
C/W
235
°
C/W
130
°
C/W
10
2
6
18
14
200
300
400
r
Figure 9. Thermal Response
1000
0.1
0.00001
t
1
, TIME (sec)
1000
1
0.0001
0.001
0.01
1
10
100
0.000001
0.1
10
100
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
JA = 321.8
°
C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
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