參數(shù)資料
型號(hào): MBR120100
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: 整流器
英文描述: 120 A, 100 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT PACKAGE-1
文件頁數(shù): 1/2頁
文件大小: 112K
代理商: MBR120100
39.62
19.69
Maximum
Sq.
Dia.
19.18
30.28
4.06
14.73
4.06
15.88
38.61
18.42
Minimum
Millimeter
3.96
13.34
3.86
18.92
30.02
15.37
Dia.
3.30
12.83
3.05
12.57
1.52
.725
.745
1.182
.156
.525
.152
.605
B
A
D
E
G
J
H
F
C
Dim. Inches
Minimum
.120
.495
K
L
1.56
.130
.160
.580
.160
1.192
.625
.505
1/4-20 UNC-2B
.755
.775
Maximum
Notes
Base is anode
Rev. Polarity
Base is cathode
Std. Polarity
D
C
B
F
K
L
E
J
H
A
G
ROHS Compliant
Reverse Energy Tested
175°C Junction Temperature
Guard Ring Protection
120 Amperes/80 to 100 Volts
Schottky Barrier Rectifier
MBR120100
123NQ100
MBR12080
*Add Suffix R for Reverse Polarity
123NQ080
Part Number
Industry
80V
90V
100V
Repetitive Peak
Reverse Voltage
HS12390*
HS12380*
HS123100*
Microsemi
Reverse Voltage
Working Peak
80V
90V
100V
Catalog Number
*Pulse test: Pulse width 300sec, Duty cycle 2%
R
T
I
V
I
T
V
8.3ms, half sine, J = 175°C
f = 1 KHZ, 25°C, 1sec square wave
RRM, J = 125°C*
RRM, J = 25°C
R = 5.0V, C = 25°C
FM = 120A: J = 25°C*
FM = 120A: J = 125°C*
C = 112°C, Square wave,
0JC = 0.40°C/W
I
VFM
I
FM
V
I
RM
R(OV)
F(AV)
FSM
CJ
RM
I
Typical junction capacitance
Average forward current
Maximum surge current
Maximum repetitive reverse current
Max peak forward voltage
Max peak reverse current
3000 pF
Electrical Characteristics
2000 Amps
2 Amps
75 mA
120 Amps
0.91 Volts
.76 Volts
3.0 mA
-55°C to 175°C
0.12°C/W
0.40°C/W
Case to sink
Junction to case
-55°C to 175°C
20-25 inch pounds
1.1 ounces (32 grams) typical
35-40 inch pounds
TJ
R
TSTG
OCS
OJC
Weight
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Mounting Base Torque
Thermal and Mechanical Characteristics
120 Amp Schottky Rectifier
HS12380-HS123100
January, 2011 - Rev. 6
www.microsemi.com
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參數(shù)描述
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