參數(shù)資料
型號: MBR1100RLG
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Axial Lead Rectifier
中文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
封裝: LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 66K
代理商: MBR1100RLG
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MBR1100/D
MBR1100
Preferred Device
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in lowvoltage,
highfrequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
GuardRing for Stress Protection
Low Forward Voltage
175
°
C Operating Junction Temperature
High Surge Capacity
These are PbFree Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(V
0.2 V
(dc), R
= 50
°
C/W,
P.C. Board Mounting, [see Note 3], T
A
= 120
°
C)
I
O
1.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
50
A
Operating and Storage Junction Temperature
Range (Note 1)
T
J
, T
stg
65 to
+175
°
C
Voltage Rate of Change (Rated V
R
)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10
V/ns
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
SCHOTTKY
BARRIER RECTIFIER
1.0 AMPERE, 100 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MBR1100
Axial Lead*
1000 Units/Bag
MBR1100G
Axial Lead*
1000 Units/Bag
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR1100RL
Axial Lead*
5000/Tape & Reel
MBR1100RLG
Axial Lead*
5000/Tape & Reel
DO41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
Y
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
A
MBR1100
YYWW
相關(guān)PDF資料
PDF描述
MBR120ESFT1G Surface Mount Schottky Power Rectifier
MBR120ESFT3G Surface Mount Schottky Power Rectifier
MBR120LSFT1G Surface Mount Schottky Power Rectifier
MBR120LSFT3G Surface Mount Schottky Power Rectifier
MBR120VLSFT1G Surface Mount Schottky Power Rectifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR1100TR 功能描述:DIODE SCHOTTKY 100V 1A DO204AL RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
MBR1100TR 制造商:International Rectifier 功能描述:Schottky Rectifier
MBR1100TR-M3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1 A
MBR1150 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS
MBR1150_ R2 _10001 制造商:PanJit Touch Screens 功能描述: