參數(shù)資料
型號: MBR1090CT-E3/45
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 123K
代理商: MBR1090CT-E3/45
MBR1090CT & MBR10100CT
Vishay General Semiconductor
Document Number: 88666
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A x 2
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max.
150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
MBR10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
120
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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