參數(shù)資料
型號(hào)： MBR1080G
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： SWITCHMODE Power Rectifiers
中文描述： 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 67K
代理商： MBR1080G
MBR1060, MBR1080, MBR1090, MBR10100
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
1060
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
80
90
100
V
Average Rectified Forward Current (Rated V
R
) T
C
= 133
°
C
I
F(AV)
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133
°
C
I
FRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
0.5
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
60
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125
°
C)
(i
F
= 10 Amps, T
C
= 25
°
C)
(i
F
= 20 Amps, T
C
= 125
°
C)
(i
F
= 20 Amps, T
C
= 25
°
C)
v
F
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125
°
C)
(Rated dc Voltage, T
C
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
6.0
0.10
mA
相關(guān)PDF資料
PDF描述
MBR1090G SWITCHMODE Power Rectifiers
MBR1035G SWITCHMODE Power Rectifiers
MBR1045G SWITCHMODE Power Rectifiers
MBR1060C SCHOTTKY BARRIER RECTIFIER DIODES
MBR1060CL-TA3-T SCHOTTKY BARRIER RECTIFIER DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR1090 功能描述:肖特基二極管與整流器 10A 90V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR1090/45 制造商:Vishay Angstrohm 功能描述:Diode Schottky 90V 10A 2-Pin(2+Tab) TO-220AC Tube 制造商:Vishay Vitramon 功能描述:Diode Schottky 90V 10A 2-Pin(2+Tab) TO-220AC Tube
MBR1090_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier
MBR1090_12 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier
MBR1090CT 功能描述:肖特基二極管與整流器 10 Amp 90 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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