參數(shù)資料
型號： MBR1050CT
廠商： DIODES INC
元件分類： 參考電壓二極管
英文描述： 10A SCHOTTKY BARRIER RECTIFIER
中文描述： 5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 647K
代理商： MBR1050CT
THRU
10 Amp
Schott ky Barrier
Rectifier
30-60 Volts
Features
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +175
°
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
www
mc c semi
.c om
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
2
1
3
MBR1035 MBR103 35V
MBR1040 MBR104 40V
MBR1045 MBR104 45V
MBR1050 MBR105 50V
MBR1060 MBR106 60V
24.5V 35V
28V 40V
31.5V 45V
35V 50V
42V 60V
MBR1030 MBR103 30V
21V 30V
MBR1030CT
MBR1060CT
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
10A
T
C
= 105
°
C
Maximum Forward
Voltage Drop Per
Element
MBR1030CT-45CT
MBR1050CT-60CT
I
FM
= 5A
T
J
=
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT
IR
*Pulse test: Pulse width 300
μ
sec, Duty cycle
2
%
Typical Junction
15mA
T
J
=
1
25
°
C
Peak Forward Surge
Current
I
FSM
125A
8.3ms, half sine
.70V
.
8
0V
.
57
V
.
65
V
0.1mA T
J
= 25
°
C
V
F
I
FM
= 5A
T
J
=
25
°
C
MBR1030CT-45CT
MBR1050CT-60CT
125
°
C
220pF
170pF
C
J
Measured at
1.0MHz, V
R
=4.0V
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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