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參數(shù)資料
| 型號： | MBR10200CT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts |
| 中文描述： | 10安培羥色胺功率肖特基整流器100伏特至200Volts |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 222K |
| 代理商： | MBR10200CT |
LTO
-
DMS
MBR10100CT thru MBR10200CT
10 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporatin
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
DIMENSIONS
INCHES
MM
DIM
MIN
0.570
0.380
0.100
0.235
0.335
0.110
0.500
0.095
0.025
0.016
0.142
0.160
0.045
0.102 typ
MAX
0.620.
0.405
0.120
0.255
0.365
0.155
0.562
0.105
0.035
0.025
0.147
0.190
0.055
MIN
14.4
9.66
2.54
5.97
8.51
2.80
12.7
2.42
0.64
0.41
3.61
4.06
1.14
2.6 typ
MAX
15.75
10.28
3.04
6.48
9.27
3.93
14.27
2.66
0.89
0.64
3.37
4.82
1.39
NOTE
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Symbol
Characteristics
MBR10100CT
MBR10150CT
MBR10200CT
Unit
V
RRM
Maximum Recurrent Peak Reverse Voltage
100
150
200
V
V
RM
Maximum DC Blocking Voltage
100
150
200
V
V
R(RMS)
Maximum RMS Voltage
70
105
140
V
V
F
Maximum Forward Voltage (Note 1)
I
F
=10A @T
J
=25°C
0.85
0.95
V
I
F(AV)
Average Forward Current
10
A
I
FSM
8.3ms Single Half-Sine-Wave
Peak Forward Surge Current
150
A
dv/dt
Voltage Rate Of Change (Rated V
R
)
10000
V/us
I
R
Maximum
DC
Reverse
Current
at
Rated
DC
Blocking Voltage
T
J
=25°C
T
J
=125°C
0.2
40
mA
R
thJC
Typical Thermal Resistance (Note 2)
2.0
°C/ W
C
J
Typical Junction Capacitance (Note 3)
170
pF
T
J
Operating Temperature Range
-55to+150
°C
T
STG
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Storage Temperature Range
-55to+175
°C
TO-220AB
Revision: 1
2002/06/17
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| MBR10200CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 10A 3-Pin(3+Tab) TO-220AB Tube |
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| MBR10200CTC0 | 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 10A, TO-220AB |
| MBR10200CT-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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