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參數(shù)資料
| 型號： | MBR10100CT |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual High-Voltage Schottky Rectifiers |
| 中文描述： | 雙高壓肖特基整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 881K |
| 代理商： | MBR10100CT |
THRU
10 Amp
Schott ky Barrier
Rectifier
80-100 Volts
Features
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +175
°
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
M C C
!"#
$% !"#
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
2
1
3
Maximum Forward
Voltage Drop Per
Element
Typical Junction
Capacitance
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
*Pulse test: Pulse width 300
μ
sec, Duty cycle
2
%
www
mc c semi
.c om
C
J
15mA
T
J
=
1
25
°
C
Peak Forward Surge
Current
I
FSM
120A
8.3ms, half sine
IR
0.2mA T
J
= 25
°
C
V
F
.85V
.75V
MBR1010 MBR101 100V
70V 100V
MBR1080 MBR108 80V
56V 80V
MBR1080CT
MBR10100CT
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
10A
T
C
= 100
°
C
T
J
=
125
°
C
I
FM
= 5A
T
J
=
25
°
C
300pF
Measured at
1.0MHz, V
R
=4.0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR10100CT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10100CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10100CT/45 | 功能描述:肖特基二極管與整流器 10 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR10100CT_1 | 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Schottky Barrier Diode |
| MBR10100CT_12 | 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 10Amp 100Volt |
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