參數(shù)資料
型號: MBR10100-M3/4W
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù): 1/4頁
文件大?。?/td> 109K
代理商: MBR10100-M3/4W
MBR1090, MBR10100
Vishay General Semiconductor
Document Number: 89193
Revision: 30-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
High-Voltage Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free
according
to
IEC
61249-2-21
definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
TO-220AC
TMBS
CASE
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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