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參數(shù)資料
| 型號： | MBR0530 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | SOD-123, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MBR0530 |
Document Number: 93435
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Aug-08
3
MBR0530
Schottky Diode, 0.5 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - Pd x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 4)
0.01
1.0
0.1
10
I F
-
Instantaneous
Forward
Current
(A)
VFM - Forward Voltage Drop (V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.0001
0.1
1.0
10
0.01
0.001
100
I R
-Reverse
Current
(mA)
VR - Reverse Voltage (V)
10
515
20
25
30
0
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 75 °C
T
J = 50 °C
T
J = 25 °C
10
100
1000
C
T
-Junction
Capacitance
(pF)
VR - Reverse Voltage (V)
10
515
20
25
30
0
T
J = 25 °C
80
90
100
110
120
130
140
160
150
Allowable
Case
Temperature
(°C)
IF(AV) - Average Forward Current (A)
0.4
0.2
0.6
0.8
0
DC
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave
0
0.1
0.2
0.3
Average
Power
Loss
(W)
IF(AV) - Average Forward Current (A)
0.2
0.4
0.8
0.6
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
1
100
I FSM
-
Non-Repetitive
Surge
Current
(A)
tp - Square Wave Pulse Duration (s)
100
1000
10 000
10
At any rated load condition
and with rated V
RRM applied
following surge
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| MBR10100/45-E3 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB1090/31 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB1090/45-E3 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB10100/81 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB1090/81-E3 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR0530/D3 | 制造商:Vishay Intertechnologies 功能描述:SCHOTTKY RECTIFIER, Diode Configuration:Single |
| MBR0530_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY RECTIFIER |
| MBR0530-CA2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY RECTIFIER DIODE |
| MBR0530-CB2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY RECTIFIER DIODE |
| MBR0530-G | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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