參數(shù)資料
型號： MBPW16-06S6
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： 32 A, 600 V, N-CHANNEL IGBT
封裝： MODULE-25
文件頁數(shù)： 2/6頁
文件大小： 571K
代理商： MBPW16-06S6
2003 IXYS All rights reserved
Output Inverter IGBTs T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C = 25°C
32
A
I
C90
T
C = 90°C
16
A
SSOA
V
GE = 15 V; RG =22 ; TVJ = 125°C; Vcc=0.8VCES
I
CM = 32
A
(RBSOA)
Clamped inductive load @0.8V
CES
t
SC
V
CE =360 V; VGE = ±15 V; TVJ = 125°C
10
s
(SCSOA)
R
G = 22 ; non-repetitive
P
C
T
C = 25°C
100
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
I
C = IC90; VGE = 15 V; TVJ =
25°C
2.4
2.7
V
V
GE(th)
I
C = 750 A; VGE = VCE
3.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
50
A
T
VJ = 125°C
1500
A
I
GES
V
CE = 0 V; VGE = ± 20 V
±100 nA
t
d(on)
30
ns
t
r
30
ns
t
d(off)
200
ns
t
f
240
ns
E
off
1.1
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
705
pF
Q
Gon
V
CE= 300V; VGE = 15 V; IC = IC90
24
nC
R
thJC
(per IGBT)
1.25 K/W
R
thJS
(per IGBT)
1.85 K/W
MBPW16-06S6
Inductive load, T
VJ = 125°C
V
CE = 0.8 VCES; IC = 16 A
V
GE = 15 V; RG = 22
Output Inverter Diodes D1 - D6
Symbol
Conditions
Maximum Ratings
I
FRMS
T
C = 100°C; rectangular, d=0.5
35
A
I
FAVG
15
A
Symbol
Conditions
Characteristic Values
min.
typ. max.
V
F
I
F = 15 A; VGE = 0 V; TVJ =
150°C
1.35
V
T
VJ =
25°C
2.0
V
I
RM
I
F = 25A; -diF/dt = -100 A/s;VR=100V;TVJ = 100°C
4.9
A
t
rr
I
F = 1 A; VR = 30 V; TVJ = 25°C; -diF/dt = -100 A/s
35
ns
R
thJC
(per diode)
2.0 K/W
R
thJS
(per diode)
3.0 K/W
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