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參數(shù)資料
| 型號(hào)： | MBN600GR12A |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | MBN600GR12A |
1.5
1
0.5
0
100
200
300
400
600
500
800
700
TYPICAL
Switching
Time
,t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=600V
VGE
=±15V
RG
=2.2
TC
=25°C
Inductive Load
160
140
100
120
80
20
40
60
0
400
500
600
200
300
100
700
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
10
1
0.1
1
10
100
Switching
Time
,t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
VCC
=600V
VGE
=±15V
IC
=600A
TC
=25°C
Inductive Load
TYPICAL
1000
100
10
0.1
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=600V
VGE
=±15V
IC
=600A
TC
=125°C
Inductive Load
Err
Eton
Etoff
VCC
=600V
VGE
=±15V
RG
=2.2
TC
=125°C
Inductive Load
10000
1000
100
10
1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=2.2
TC
≤125°C
PDE-N600GR12A-0
tf
tr
tf
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