參數(shù)資料
型號: MBN1200GR12A
元件分類: IGBT 晶體管
英文描述: 1200 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù): 3/4頁
文件大小: 123K
代理商: MBN1200GR12A
TYPICAL
400
350
300
200
250
150
50
100
0
1000
1200
600
800
200
400
1400
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
TYPICAL
1000
100
10
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
Err
10000
1000
100
10
1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=3.3
TC
≤125°C
PDE-N1200GR12A-0
Vcc
=600V
VGE
=±15V
RG
=3.3
TC
=125°C
Inductive Load
Vcc
=600V
VGE
=±15V
IC
=1200A
TC
=125°C
Inductive Load
Err
Eton
Etoff
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