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參數(shù)資料
| 型號(hào)： | MBM300GS6AW |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300 A, 600 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MBM300GS6AW |
1.5
1.0
0.5
0
100
200
300
400
TYPICAL
Switching
Time
,t
(
m
s)
Collector Current, IC (A)
Switching time vs. Collector current
tr
tf
ton
toff
Vcc
=300V
VGE
=±15V
RG
=8.2W
TC
=25°C
Resistive Load
20
25
30
15
10
5
0
100
300
200
400
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current, IC (A)
Switching loss vs. Collector current
10
1
0.1
1
10
100
Switching
Time
,t
(
m
s)
Gate Resistance, RG (
W)
Switching time vs. Gate resistance
tr
tf
ton
toff
VCC
=300V
VGE
=±15V
IC
=300A
TC
=25°C
Resistive Load
TYPICAL
100
10
1
10
100
Switching
Loss
,Et
on
,Et
off
(mJ/pulse)
Gate Resistance, RG (
W)
Switching loss vs. Gate resistance
VCC
=300V
VGE
=±15V
IC
=300A
TC
=125°C
Inductive Load
Err
Eton
Etoff
Vcc
=300V
VGE
=±15V
RG
=8.2W
TC
=125°C
Inductive Load
1000
100
10
1
0.1
0
100
200
300
400
500
600
700
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=8.2W
TC
125°C
PDE-M300GS6AW-0
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