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參數(shù)資料
| 型號(hào)： | MBM29PL65LM90TN |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 1/56頁 |
| 文件大小： | 284K |
| 代理商： | MBM29PL65LM90TN |
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DS05-20903-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64 M (4M
×
16) BIT
MirrorFlash
TM
MBM29PL65LM
-
90/10
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DESCRIPTION
MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the
chip, comprehensive erase and by-the-unit, individual sector erase.
Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed stand-
by mode operation.
MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type
is 48-pin TSOP
Embedded Program Algorithm
TM
, when executed with erase or program command sequences, automatically times
the program pulse widths and verifies proper cell margin.
MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables
to rewrite data within the internal system. It is a truly dependable device for vast application possibilities.
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PRODUCT LINE UP
I
PACKAGE
Notes: Programming in byte mode (
×
8) is prohibited.
Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same
address.
Part No.
MBM29PL65LM-90
3.0 V to 3.6 V
V
CC
90 ns
90 ns
25 ns
MBM29PL65LM-10
3.0 V to 3.6 V
V
CC
100 ns
100 ns
30 ns
V
CC
V
CCQ
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
48-pin plastic TSOP (1)
(FPT-48P-M19)
Marking Side
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