參數(shù)資料
型號(hào): MBM29PL3200TE90PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32 M (2 M X 16/1 M X 32) BIT
中文描述: 1M X 32 FLASH 3V PROM, 90 ns, PBGA84
封裝: PLASTIC, FBGA-84
文件頁數(shù): 1/59頁
文件大小: 670K
代理商: MBM29PL3200TE90PBT
DS05-20890-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
PAGE MODE FLASH MEMORY
CMOS
32 M (2 M
×
16/1 M
×
32) BIT
MBM29PL3200TE/BE
70/90
I
DESCRIPTION
The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits
each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device
is designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The device can also be reprogrammed in standard EPROM pro-
grammers.
(Continued)
I
PRODUCT LINE-UP
I
PACKAGES
Part No.
MBM29PL3200TE/BE
Ordering Part No.
V
CC
=
3.3 V
V
CC
=
3.0 V
70
70
90
Max. Random Address Access Time (ns)
90
Max. Page Address Access Time (ns)
25
35
Max. CE Access Time (ns)
70
90
Max. OE Access Time (ns)
25
35
+
0.3 V
+
0.6 V
90-pin plastic SSOP
84-ball plastic FBGA
(FPT-90P-M01)
(BGA-84P-M01)
相關(guān)PDF資料
PDF描述
MBM29PL3200TE90PFV 32 M (2 M X 16/1 M X 32) BIT
MBM29PL3200TE70 32 M (2 M X 16/1 M X 32) BIT
MBM29PL3200BE90 32 M (2 M X 16/1 M X 32) BIT
MBM29PL3200BE90PBT 32 M (2 M X 16/1 M X 32) BIT
MBM29PL3200BE90PFV 32 M (2 M X 16/1 M X 32) BIT
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