參數(shù)資料
型號(hào): MBM29LV800B
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×16) Bit Flash Memory( 單5V 電源電壓1M ×8/512K ×16位閃速存儲(chǔ)器)
中文描述: 8米(1米× 8/512K × 16)位快閃記憶體(單5V的電源電壓100萬× 8/512K × 16位閃速存儲(chǔ)器)
文件頁數(shù): 31/51頁
文件大?。?/td> 647K
代理商: MBM29LV800B
31
MBM29LV800T
-10/-12
/MBM29LV800B
-10/-12
Write/Erase/Program Operations
Alternate CE Controlled Writes
Note:
This does not include the preprogramming time.
Parameter Symbols
Description
-10
-12
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
100
120
ns
t
AVEL
t
AS
Address Setup Time
Min.
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min.
50
50
ns
t
DVEH
t
DS
Data Setup Time
Min.
50
50
ns
t
EHDX
t
DH
Data Hold Time
Min.
0
0
ns
t
OES
Output Enable Setup Time
Min.
0
0
ns
t
OEH
Output Enable
Hold Time
Read
Min.
0
0
ns
Toggle and Data Polling
Min.
10
10
ns
t
GHEL
t
GHEL
Read Recover Time Before Write
Min.
0
0
ns
t
WLEL
t
WS
WE Setup Time
Min.
0
0
ns
t
EHWH
t
WH
WE Hold Time
Min.
0
0
ns
t
ELEH
t
CP
CE Pulse Width
Min.
50
50
ns
t
EHEL
t
CPH
CE Pulse Width High
Min.
30
30
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
8
8
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note)
Typ.
1
1
sec
t
VCS
V
CC
Set Up Time
Min.
50
50
μ
s
t
RB
Recover Time From RY/BY
Min.
0
0
ns
t
RP
RESET Pulse Width
Min.
500
500
ns
t
RH
RESET Hold Time Before Read
Min.
500
500
ns
t
FLQZ
BYTE Switching Low to Output High-Z
Max.
30
40
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
Min.
90
90
ns
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