參數(shù)資料
型號: MBM29LV652UE90PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (4M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁數(shù): 40/58頁
文件大小: 571K
代理商: MBM29LV652UE90PBT
MBM29LV652UE-
90/12
40
Figure 7 Alternate CE Controlled Program Operation Timing Diagram
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
Addresses
Data
t
AS
t
CPH
t
DH
DQ
7
A0h
D
OUT
CE
XXXh
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
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