• 參數(shù)資料
    型號(hào)： MBM29LV160BE12TN
    廠商： FUJITSU LTD
    元件分類： DRAM
    英文描述： 16M (2M X 8/1M X 16) BIT
    中文描述： 2M X 8 FLASH 3V PROM, 120 ns, PDSO48
    封裝： PLASTIC, TSOP1-48
    文件頁(yè)數(shù)： 2/59頁(yè)
    文件大?。?/td> 653K
    代理商： MBM29LV160BE12TN
    MBM29LV160TE/BE
    -70/90/12
    2
    (Continued)
    The device also features a sector erase architecture. The sector mode allows each sector to be erased and
    reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.
    The device features single 3.0 V power supply operation for both read and write functions. Internally generated
    and regulated voltages are provided for the program and erase operations. A low V
    CC
    detector automatically
    inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
    7
    ,
    by the Toggle Bit feature on DQ
    6
    , or the RY/BY output pin. Once the end of a program or erase cycle has been
    comleted, the device internally resets to the read mode.
    The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-
    bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
    reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
    occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
    reset to the read mode and will have erroneous data stored in the address locations being programmed or
    erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-
    cessor to read the boot-up firmware from the Flash memory.
    Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
    levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits
    within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
    at a time using the EPROM programming mechanism of hot electron injection.
    * :
    I
    PACKAGES
    48-pin plastic TSOP (I)
    (FPT-48P-M19)
    48-pin plastic CSOP
    (LCC-48P-M03)
    48-pin plastic TSOP (I)
    (FPT-48P-M20)
    48-pin plastic FBGA
    (BGA-48P-M11)
    Marking Side
    Marking Side
    Embedded Erase
    TM
    and Embedded Program
    TM
    are trademarks of Advanced Micro Devices, Inc.
    相關(guān)PDF資料
    PDF描述
    MBM29LV160TE-12 122 x 32 pixel format, LED Backlight available
    MBM29LV160TE90PBT 16M (2M X 8/1M X 16) BIT
    MBM29LV160TE90PCV 16M (2M X 8/1M X 16) BIT
    MBM29LV160TE90TN 16M (2M X 8/1M X 16) BIT
    MBM29LV160BE90PCV 16M (2M X 8/1M X 16) BIT
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    MBM29LV160BE12TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
    MBM29LV160BE-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
    MBM29LV160BE70PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
    MBM29LV160BE70PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
    MBM29LV160BE-70PFCN 制造商:FUJITSU 功能描述:ELECTRONIC COMPONENT
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