參數(shù)資料
型號(hào): MBM29LV080A-12PTV
廠商: FUJITSU LTD
元件分類(lèi): DRAM
英文描述: 8M (1M x 8) BIT
中文描述: 1M X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: PLASTIC, TSOP1-40
文件頁(yè)數(shù): 24/49頁(yè)
文件大?。?/td> 400K
代理商: MBM29LV080A-12PTV
MBM29LV080A
-70/-90/-12
24
I
DC CHARACTERISTICS
Notes: 1. The l
CC
current listed includes both the DC operating current and the frequency dependent component.
2. l
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. This voltage is for Sector Protection operation.
5. (V
ID
- V
CC
) do not exceed 9 V.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μA
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.,
A
9
, OE, RESET = 12.5 V
35
μA
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
, f = 10 MHz
22
mA
CE = V
IL
, OE = V
IH
, f = 5 MHz
12
mA
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
V
CC
= V
CC
Max., CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V
V
CC
= V
CC
Max.,
RESET = V
SS
±
0.3 V
V
CC
= V
CC
Max.,
RESET = V
CC
±
0.3 V,
CE = V
SS
±
0.3 V, V
IN
= V
CC
±
0.3 V
or V
SS
±
0.3 V
35
mA
I
CC3
V
CC
Current (Standby)
5
μA
I
CC4
V
CC
Current during Reset
(Standby, RESET)
5
μA
I
CC5
V
CC
Current
(Automatic Sleep Mode) (Note 3)
5
μA
V
IL
Input Low Level
–0.5
0.6
V
V
IH
Input High Level
2.0
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect,
Sector Protection and Temporary
Sector Unprotection
(A
9
, OE, RESET) (Note 4, 5)
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 4.0 mA, V
CC
= V
CC
Min.
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.0 mA, V
CC
= V
CC
Min.
2.4
V
V
OH2
I
OH
= –100 μA
V
CC
– 0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
2.3
2.5
V
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