
DS05-20855-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8) BIT
MBM29LV016T
-80/-90/-12
/MBM29LV016B
-80/-90/-12
I
FEATURES
Single 3.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
Minimum 100,000 program/erase cycles
High performance
80 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded program
TM
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Sector Protection set function by Extended sector protect command
Temporary sector unprotection
Temporary sector unprotection via the RESET pin
In accordance with CFI (Common Flash Memory Interface)
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.