- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380468 > MBM29F160BE70TR (SPANSION LLC) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT PDF資料下載
參數(shù)資料
| 型號： | MBM29F160BE70TR |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| 中文描述： | 1M X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 267K |
| 代理商： | MBM29F160BE70TR |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
DS05-20879-6E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
MBM29F160TE
70/90
MBM29F160BE
70/90
I
DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be
programmed in-system with the standard system 5.0 V V
CC
supply. 12.0 V V
PP
is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE) and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29F160TE/BE
70
90
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
V
CC
= 5.0 V
±
10 %
70
70
30
90
90
40
48-pin plastic TSOP (1)
Marking Side
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29F160TE70 | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| MBM29F160TE70TR | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| MBM29F800BA | FLASH MEMORY |
| MBM29LV160BM90PBT | FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM |
| MBM29LV160BM90TN | FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F160BE-70TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-90PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-90PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-90TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復。