參數(shù)資料
型號: MBM29DS163TE10TN
廠商: SPANSION LLC
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT Dual Operation
中文描述: 1M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 1/67頁
文件大?。?/td> 330K
代理商: MBM29DS163TE10TN
DS05-20891-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16 M (2 M
×
8/1 M
×
16) BIT
Dual Operation
MBM29DS163TE/BE
10
I
DESCRIPTION
The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M
words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is
designed to be programmed in system with standard system 1.8 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not
required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
(Continued)
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PRODUCT LINE UP
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PACKAGES
48-pin plastic TSOP (1)
Part No.
MBM29DS163TE/BE10
V
CC
=
2.0 V
100
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
100
Max OE Access Time (ns)
35
+
0.2 V
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M11)
Marking Side
Marking Side
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