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參數(shù)資料
| 型號(hào)： | MBM29DL64DF |
| 廠商： | Fujitsu Limited |
| 英文描述： | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| 中文描述： | 閃存的CMOS 64米（8的MX 8 / 4的MX 16）位 |
| 文件頁數(shù)： | 3/68頁 |
| 文件大?。?/td> | 854K |
| 代理商： | MBM29DL64DF |
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MBM29DL64DF
-70
3
I
FEATURES
0.17
μ
m Process Technology
Two-bank Architecture for Simultaneous Read/Program and Read/Erase
FlexBank
TM
*
1
Bank A : 8 Mbit (8 KB
×
8 and 64 KB
×
15)
Bank B : 24 Mbit (64 KB
×
48)
Bank C : 24 Mbit (64 KB
×
48)
Bank D : 8 Mbit (8 KB
×
8 and 64 KB
×
15)
Two virtual Banks are chosen from the combination of four physical banks (Refer to “
I
FUNCTIONAL
DESCRIPTION FlexBank
TM
Architecture”and “Example of Virtual Banks Combination”.)
Host system can program or erase in one bank, and then read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
Single 3.0 V Read, Program, and Erase
Minimized system level power requirements
Compatible with JEDEC-standard Commands
Uses the same software commands as E
2
PROMs
Compatible with JEDEC-standard Worldwide Pinouts
48-pin TSOP (1) (Package suffix : TN
Normal Bend Type)
48-ball FBGA (Package suffix : PBT)
Minimum 100,000 Program/Erase Cycles
High Performance
70 ns maximum access time
Sector Erase Architecture
Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word mode
Sixteen 8 Kbyte and one hundred twenty-six 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC Input Pin
At V
IL
allows protection of “outermost” 2
×
8 Kbytes on both ends of boot sectors, regardless of sector group
protection/unprotection status
At V
ACC
, increases program performance
Embedded Erase
TM
*
2
Algorithms
Automatically preprograms and erases the chip or any sector
Embedded Program
TM
*
2
Algorithms
Automatically programs and verifies data at specified address
*1 : FlexBank
TM
is a trademark of Fujitsu Limited
*2 : Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
(Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL64DF-70 | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70PBT | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70TN | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800TA | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL64DF-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800BA | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
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