參數(shù)資料
型號(hào)： MBM29DL32XTE80
廠商： Spansion Inc.
英文描述： FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation
中文描述： 閃存的CMOS 32 M（下4米8月2日的MX 16）位雙操作
文件頁(yè)數(shù)： 1/84頁(yè)
文件大?。?/td> 380K
代理商： MBM29DL32XTE80
DS05-20881-7E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32 M (4 M
×
8/2 M
×
16) BIT Dual Operation
MBM29DL32XTE/BE
80
/
90
I
DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or
2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also
be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29DL32XTE/BE
80
90
Power Supply Voltage V
CC
(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
3.3
3.0
80
80
30
90
90
35
+
0.3
0.3
+
0.6
0.3
48-pin plastic TSOP (1)
48-pin plastic TSOP (1)
63-ball plastic FBGA
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-63P-M01)
Marking Side
Marking Side
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MBM29DL34TF70PBT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation
MBM29DL34TF70TN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation
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