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參數(shù)資料
| 型號： | MBM200GR12A |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MBM200GR12A |
VGE
=15V14V13V12V
400
02
4
6
8
10
200
300
100
0
11V
TYPICAL
10V
9V
Tc
=25°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Pc
=1250W
VGE
=15V14V13V12V
400
02
4
6
8
10
200
300
100
0
11V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=200A
Ic
=400A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=25°C
Ic
=200A
Ic
=400A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=125°C
20
15
10
5
0
400
800
1200
1600
2000
TYPICAL
Vcc
=600V
Ic
=200A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
Gate Charge, QG (nC)
Gate charge characteristics
400
300
200
100
0
1
234
5
TYPICAL
F
orw
ard
Current,
I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
VGE
=0V
Tc
=25°C
Tc
=125°C
PDE-M200GR12A-0
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| MBN1200D25B | 1200 A, 2500 V, N-CHANNEL IGBT |
| MBN1200GS12AW | IGBT |
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