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參數(shù)資料
| 型號： | MBD770DWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 72K |
| 代理商： | MBD770DWT1G |
MBD110DWT1, MBD330DWT1, MBD770DWT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
MBD110DWT1
Figure 1. Reverse Leakage
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
P
LO
, LOCAL OSCILLATOR POWER (mW)
N
,
IF
,
IR
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
0.7
0.5
130
110
120
90
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
V
R
= 3.0 V
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
T
A
= 40
°
C
T
A
= 85
°
C
T
A
= 25
°
C
Note 3 L
S
is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Note 1 C
D
and C
T
are measured using a capacitance
bridge (Boonton Electronics Model 75A or equiva-
lent).
Note 2 Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MBD110DWT1
MBD110DWT1
MBD110DWT1
MBD110DWT1
CD
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