參數(shù)資料
型號(hào): MBD110DWT1
廠商: MOTOROLA INC
元件分類: 參考電壓二極管
英文描述: Dual Schottky Barrier Diodes
中文描述: SILICON, VHF-UHF BAND, MIXER DIODE
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 180K
代理商: MBD110DWT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Application circuit designs are moving toward the consolidation of device count and
into smaller packages. The new SOT–363 package is a solution which simplifies
circuit design, reduces device count, and reduces board space by putting two discrete
devices in one small six–leaded package. The SOT–363 is ideal for low–power
surface mount applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
SOT–363
SOT–23
Area (mm2)
Max Package PD (mW)
Device Count
4.6
120
2
7.6
225
1
Space Savings:
Package
1
SOT–23
2
SOT–23
SOT–363
40%
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our
popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They
are designed for high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
VR
7.0
30
70
Vdc
Forward Power Dissipation
TA = 25
°
C
PF
120
mW
Junction Temperature
TJ
Tstg
–55 to +125
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD110DWT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419B–01, STYLE 6
SOT–363
123
654
Motorola Preferred Devices
相關(guān)PDF資料
PDF描述
MBD330DWT1 Dual Schottky Barrier Diodes
MBD110DWT1 Dual SCHOTTKY Barrier Diodes
MBD770DWT1 Dual SCHOTTKY Barrier Diodes
MBR2515L SWITCHMODE⑩ Power Rectifier
MBR4015LWT SWITCHMODE⑩ Power Rectifier
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