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參數(shù)資料
| 型號： | MB91F233LLGA-GE1 |
| 廠商： | FUJITSU LTD |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-bit Microcontroller |
| 中文描述： | 32-BIT, FLASH, 33.6 MHz, RISC MICROCONTROLLER, PBGA128 |
| 封裝： | PLASTIC, FLGA-128 |
| 文件頁數(shù)： | 61/66頁 |
| 文件大小： | 861K |
| 代理商： | MB91F233LLGA-GE1 |
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MB91230 Series
61
6.
Electrical Characteristics for the D/A Converter
(V
CC
3IO
=
AV
CC
=
3.0 V to 3.6 V, V
SS
=
AV
SS
=
0.0 V, Ta
=
0
°
C to
+
85
°
C)
Value
Unit
Typ
Max
8
bit
+
2.0
LSB
+
1.0
LSB
* : The current consumption by this D/A converter varies with input digital code.
This standard value indicates the current consumed when the digital code that maximizes the current consumption
is input.
7.
Flash Memory Write/Erase Characteristics
* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+
85
°
C).
Parameter
Remarks
Min
2.0
1.0
Resolution
Nonlinear error
When the output is unloaded
Differential linear error
When the output is unloaded
Conversion speed
0.6
μ
s
When load capacitance
(C
L
) = 20 pF
3.0
μ
s
When load capacitance
(C
L
) = 100 pF
Output impedance
2.0
2.9
3.8
k
Analog current
40
μ
A
10
μ
s conversion, when the
output is unloaded
460*
μ
A
When the input digital code is
fixed at 7A
H
or 85
H
0.1
μ
A
At power-down
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
Ta
=
+
25
°
C,
Vcc
=
5.0 V
Ta
=
+
25
°
C,
Vcc
=
5.0 V
Ta
=
+
25
°
C,
Vcc
=
5.0 V
Ta
=
+
25
°
C,
Vcc
=
5.0 V
1
15
s
Excludes 00
H
programming
prior erasure
Chip erase time
10
s
Excludes 00
H
programming
prior erasure
Byte write time
8
3,600
μ
s
Not including system-level
overhead time.
Chip write time
2.1
s
Not including system-level
overhead time.
Erase/write cycle
Flash data retention time Average Ta
=
+
85
°
C
10,000
cycle
20
year
*
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