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參數(shù)資料
| 型號： | MB8501E064AB-60L |
| 廠商： | Fujitsu Limited |
| 英文描述： | 1 M ×64 BIT Hyper Page Mode DRAM SO-DIMM(CMOS 1 M ×64 位超級頁面存取模式動態(tài)RAM模塊) |
| 中文描述： | 1米× 64位超頁模式DRAM的SO - DIMM的CMOS（1米× 64位超級頁面存取模式動態(tài)內存模塊） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 340K |
| 代理商： | MB8501E064AB-60L |
DS05-11229-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
Un-Buffered
1 M
×
64 BIT
HYPER PAGE MODE DRAM SO-DIMM
MB8501E064AB-60/-70/-60L/-70L
144-pin, 1 M
×
64 BIT Hyper Page Mode SO-DIMM, 3.3 V, 1-bank, 4 KR
I
DESCRIPTION
The Fujitsu MB8501E064AB is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module
consisting of four MB81V16165A devices. The MB8501E064AB is optimized for those applications requiring small
size package, low power consumption, enhanced performance. The operation and electrical characteristics of
the MB8501E064AB are the same as the MB81V16165A which features hyper page mode (EDO) operation. For
ease of memory expansion, the MB8501E064AB is offered in an 144-pin Small Outline Dual In-line Memory
Module package (SO-DIMM).
I
PRODUCT LINE & FEATURES
Parameter
MB8501E064AB
-60L
-60
-70
-70L
RAS Access Time
Random Cycle Time
Address Access Time
CAS Access Time
Hyper Page Mode Cycle Time
60 ns max.
104 ns min.
30 ns max.
15 ns max.
25 ns min.
1296 mW
70 ns max.
124 ns min.
35 ns max.
17 ns max.
30 ns min.
1152 mW
Power Dissipation (max.)
Operating Mode
Standby Mode
28.8 mW
14.4 mW
28.8 mW
14.4 mW
Conformed to 144-pin SO-DIMM JEDEC
standard
Organization: 1,048,576 words
×
64 bits
Module Size: 1.00” (height)
×
2.66”
(length)
×
0.15” (thick)
Memory: MB81V16165A
(1 M
×
16, 4 K ref., 3.3 V), 4 pcs
3.3 V
±
0.3 V Supply Voltage
4,096 Refresh Cycles/65.6 ms
Hyper Page Operation (EDO)
Serial Presence Detect (Serial EEPROM)
RAS Only Refresh/CAS-before-RAS Refresh
Package and Ordering Information:
144-pin SO-DIMM, order as
MB8501E064AB-
××
DG (DG = Gold Pad)
相關PDF資料 |
PDF描述 |
|---|---|
| MB8501E064AB-70 | 1 M ×64 BIT Hyper Page Mode DRAM SO-DIMM(CMOS 1 M ×64 位超級頁面存取模式動態(tài)RAM模塊) |
| MB8501E064AB-70L | 1 M ×64 BIT Hyper Page Mode DRAM SO-DIMM(CMOS 1 M ×64 位超級頁面存取模式動態(tài)RAM模塊) |
| MB8501S064AC-100 | CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位 同步動態(tài)RAM) |
| MB8501S064AC-67 | CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位 同步動態(tài)RAM) |
| MB8501S064AC-84 | CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位 同步動態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MB8508S064CE-100 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM |
| MB85101BAN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101BBN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101CAN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101CBN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
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