參數(shù)資料
型號: MB84VP24491HK
廠商: Fujitsu Limited
英文描述: 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
中文描述: 128M的(x16)的快閃記憶體32M的(x16)的移動FCRAMTM
文件頁數(shù): 47/70頁
文件大?。?/td> 1272K
代理商: MB84VP24491HK
MB84VP24491HK
-70
46
2.
AC Characteristics
READ OPERATION (32M Page mode FCRAM)
*1 : Maximum value is applicable if CE1r is kept at Low without change of address input of A
20
to A
3
.
If needed by system operation, please contact local FUJITSU representative for the relaxation of 1
μ
s limitation.
*2 : Address should not be changed within minimum t
RC
.
*3 : The output load 30 pF.
*4 : The output load 5 pF without any other load.
*5 : Applicable to A
20
to A
3
when CE1r is kept at Low.
*6 : Applicable only to A
2
, A
1
and A
0
when CE1r is kept at Low for the page address access.
*7 : In case Page Read Cycle is continued with keeping CE1r stays Low, CE1r must be brought to High within 4
μ
s.
In other words, Page Read Cycle must be closed within 4
μ
s.
*8 : Applicable when at least two of address inputs among applicable are switched from previous state.
*9 : t
RC
(Min) and t
PRC
(Min) must be satisfied.
Parameter
Symbol
Value
Unit
Remarks
Min
Max
Read Cycle Time
t
RC
70
1000
ns
*1, *2
CE1r Access Time
t
CE
70
ns
*3
OE Access Time
t
OE
40
ns
*3
Address Access Time
t
AA
70
ns
*3, *5
LB / UB Access Time
t
BA
30
ns
*3
Page Address Access Time
t
PAA
18
ns
*3, *6
Page Read Cycle Time
t
PRC
25
1000
ns
*1, *6, *7
Output Data Hold Time
t
OH
5
ns
*3
CE1r Low to Output Low-Z
t
CLZ
3
ns
*4
OE Low to Output Low-Z
t
OLZ
0
ns
*4
LB / UB Low to Output Low-Z
t
BLZ
0
ns
*4
CE1r High to Output High-Z
t
CHZ
20
ns
*4
OE High to Output High-Z
t
OHZ
20
ns
*4
LB / UB High to Output High-Z
t
BHZ
20
ns
*4
Address Setup Time to CE1r Low
t
ASC
–5
ns
Address Setup Time to OE Low
t
ASO
10
ns
Address Invalid Time
t
AX
10
ns
*5, *8
Page Address Invalid Time
t
AXP
10
ns
*6, *8
Address Hold Time from CE1r High
t
CHAH
–5
ns
*9
Address Hold Time from OE High
t
OHAH
–5
ns
CE1r High Pulse Width
t
CP
15
ns
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