參數(shù)資料
型號(hào): MB84VD22194EH-90-PBS
廠商: FUJITSU LTD
元件分類: 存儲(chǔ)器
英文描述: 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA71
封裝: PLASTIC, FBGA-71
文件頁數(shù): 53/61頁
文件大小: 1589K
代理商: MB84VD22194EH-90-PBS
MB84VD2218XEC/EE/2219XEC/EE
-90
53
Write Cycle (Note 3) (WE control) (SRAM)
t
WC
t
AS
t
WP
t
WR
t
CW
t
ODW
t
OEW
t
DS
t
DH
VALID DATA IN
ADDRESSES
WE
CE1s
D
OUT
D
IN
CE2s
t
CW
Notes: 1. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
output will remain at high impedance.
2. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
output will remain at high impedance.
3. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
4. Because I/O signals may be in the output state at this Time, input signals of reverse
polarity must not be applied.
Note 1
Note 4
Note 2
Note 4
t
BW
LBs, UBs
t
AW
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