參數(shù)資料
型號(hào)： MB84VD22192EG
廠商： Fujitsu Limited
英文描述： 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
中文描述： 32M的（x 8/x16）閃存
文件頁數(shù)： 2/61頁
文件大小： 1589K
代理商： MB84VD22192EG
MB84VD2218XEC/EE/2219XEC/EE
-90
2
(Continued)
1.FLASH MEMORY
Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimum 100,000 write/erase cycles
Sector erase architecture
Eight 4 K words and sixty three 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VD2218X: Top sector
MB84VD2219X: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
f write inhibit
≤
2.5 V
Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2218XEC/EE:SA69,SA70 MB84VD2219XEC/EE:SA0,SA1)
At V
IH
, allows removal of boot sector protection
At V
ACC
, program time will reduse by 40%.
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to “MBM29DL32XTE/BE”
data sheet in detailed function
2.SRAM
Power dissipation
Operating: 50 mA max.
Standby : 15
μ
A max.
Power down features using CE1s and CE2s
Data retention supply voltage: 1.5 V to 3.3 V
CE1s and CE2s Chip Select
Byte data control: LBs(DQ
0
-DQ
7
), UBs(DQ
8
-DQ
15
)
相關(guān)PDF資料
PDF描述
MB84VD22192EH 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22193EC 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22193EE 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22193EG 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22193EH 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB84VD22192EG-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22192EG-90-PBS 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22192EH 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22192EH-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22192EH-90-PBS 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
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