參數(shù)資料
型號: MB84VD22184EE
廠商: Fujitsu Limited
英文描述: 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
中文描述: 32M的(x 8/x16)閃存
文件頁數(shù): 39/61頁
文件大?。?/td> 1589K
代理商: MB84VD22184EE
MB84VD2218XEC/EE/2219XEC/EE
-90
39
(Continued)
Parameter Symbols
JEDEC
Notes: 1. This does not include the preprogramming time.
2. This timing is for Sector Protection Operation.
3. The time between writes must be less than “t
TOW
” otherwise that command will not be accepted and
erasure will start. A time-out or “t
TOW
” from the rising edge of last CE or WE whichever happens first will
initiate the execution of the Sector Erase command(s).
4. When the Erase Suspend command is written during the Sector Erase operation, the device will take a
maximum of “t
SPD
” to suspend the erase operation.
Description
-90
Typ.
Unit
Standard
t
VCS
t
VLHT
t
VIDR
t
VACCR
t
RB
t
RP
t
EOE
t
RH
t
BUSY
t
TOW
t
SPD
Min.
50
4
500
500
0
500
200
50
Max.
90
90
20
V
CC
f Setup Time
Voltage Transition Time (Note 2)
Rise Time to V
ID
(Note 2)
Rise Time to V
ACC
Recover Time from RY/BY
RESET Pulse Width
Delay Time from Embedded Output Enable
RESET High Level Period Before Read
Program/Erase Valid to RY/BY Delay
Erase Time-out Time (Note 3)
Erase Suspend Transition Time (Note 4)
μs
μs
ns
ns
ns
ns
ns
ns
ns
μs
μs
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