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參數(shù)資料
| 型號(hào)： | MB84VD22181EH-90-PBS |
| 廠商： | FUJITSU LTD |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA71 |
| 封裝： | PLASTIC, FBGA-71 |
| 文件頁(yè)數(shù)： | 7/61頁(yè) |
| 文件大小： | 1589K |
| 代理商： | MB84VD22181EH-90-PBS |
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MB84VD2218XEC/EE/2219XEC/EE
-90
7
Table 1. 2 User Bus Operations (Flash=Word mode; CIOf=V
cc
f, SRAM=Byte mode; CIOs=V
ss
)
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
. See DC Characteristics for voltage levels.
Notes: 1. Other operations except for indicated this column are inhibited.
2. WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
3. Do not apply CEf = V
IL
, CE1s = V
IL
and CE2s = V
IH
at a time.
4. It is also used for the extended sector group protections.
5. WP/ACC = V
IL
; protection of boot sectors.
WP/ACC = V
IH
; removal of boot sectors protection.
WP/ACC = V
ACC
(9V)
; Program time will reduce by 40%.
6. LB
S ,
UB
S
; Don’t care or Open.
Operation (1), (3)
CEf CE1s CE2s OE
WE
SA
LBs
(6)
UBs
(6)
DQ
0
to DQ
7
DQ
8
to DQ
15
RESET
WP/
ACC
(5)
Full Standby
H
H
X
X
L
X
X
X
X
X
HIGH-Z
HIGH-Z
H
X
Output Disable
H
L
H
H
X
H
X
X
X
X
X
X
X
HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z
H
X
L
H
X
H
X
H
X
L
L
X
L
X
L
X
L
H
H
H
H
X
X
X
HIGH-Z
HIGH-Z
Read from Flash
(2)
L
L
H
X
X
X
D
OUT
D
OUT
H
X
Write to Flash
L
H
L
X
X
X
D
IN
D
IN
H
X
Read from SRAM
Write to SRAM
Temporary Sector
Group
Unprotection(4)
H
H
L
X
H
L
SA
SA
X
X
X
X
D
OUT
D
IN
HIGH-Z
HIGH-Z
H
H
X
X
X
X
X
X
X
X
X
X
X
V
ID
X
Flash Hardware
Reset
X
H
X
X
L
X
X
X
X
X
HIGH-Z
HIGH-Z
L
X
Boot Block Sector
Write Protection
X
X
X
X
X
X
X
X
X
X
X
L
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| MB84VD22182EC-90-PBS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
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