參數(shù)資料
型號: MB84VD21181-85-PTS
廠商: Fujitsu Limited
英文描述: 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
中文描述: 1,600(× 8 / × 16)閃存
文件頁數(shù): 34/55頁
文件大?。?/td> 907K
代理商: MB84VD21181-85-PTS
MB84VD2118XA
-85
/MB84VD2119XA
-85
34
Write Cycle (CEf control) (Flash)
Addresses
WE
OE
CEf
DQ
3rd Bus Cycle
555H
A0H
PD
DQ
7
D
OUT
PA
PA
Data Polling
t
WC
t
WS
t
CP
t
DS
t
DH
t
CPH
t
WHWH1
t
GHEL
t
WH
t
AS
t
AH
Notes : 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the
×
16 mode. (The addresses differ from
×
8 mode.)
相關PDF資料
PDF描述
MB84VD21183-85-PBS 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
MB84VD21183-85-PTS 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
MB84VD21184-85-PBS 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
MB84VD21184-85-PTS 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
MB84VD21191 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
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