參數(shù)資料
型號: MB84VD21081-85-PTS
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO56
封裝: PLASTIC, TSOP1-56
文件頁數(shù): 26/55頁
文件大?。?/td> 850K
代理商: MB84VD21081-85-PTS
MB84VD2108X
-85
/MB84VD2109X
-85
26
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
(Continued)
Parameter
Symbol
I
LI
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
Input Leakage Current
V
IN
=
V
SS
to V
CC
f, V
CC
s
V
OUT
=
V
SS
to V
CC
f, V
CC
s
V
CC
f
=
V
CC
f Max., V
CC
s
=
V
CC
s Max.,
RESET
=
12.5 V
V
CC
f
=
V
CC
f Max., V
CC
s
=
V
CC
s Max.,
WP/ACC
=
V
ACC
Max.
1.0
1.0
+
1.0
+
1.0
μ
A
μ
A
I
LO
Output Leakage Current
I
LIT
RESET Inputs Leakage
Current
35
μ
A
I
LIA
ACC Input Leakage
Current
20
mA
I
CC1
f
Flash V
CC
Active Current
(Read)
(Note 1)
CEf
=
V
IL
,
OE
=
V
IH
t
CYCLE
=
5 MHz Byte
t
CYCLE
=
5 MHz Word
t
CYCLE
=
1 MHz Byte
t
CYCLE
=
1 MHz Word
13
mA
15
7
mA
7
I
CC2
f
Flash V
Active Current
(Program/Erase) (Note 2) CEf
=
V
IL
, OE
=
V
IH
35
mA
I
CC3
f
Flash V
CC
Active Current
(Read-While-Program)
(Note 5)
CEf
=
V
IL
, OE
=
V
IH
Byte
48
mA
Word
50
I
CC4
f
Flash V
CC
Active Current
(Read-While-Erase)
(Note 5)
CEf = V
IL
, OE = V
IH
Byte
48
mA
Word
50
I
CC5
f
Flash V
Active Current
(Erase-Suspend-Program) CEf
=
V
IL
, OE
=
V
IH
35
mA
I
CC1
s
SRAM V
CC
Active Current
V
CC
s
=
V
CC
Max.,
CE1s
=
V
IL
,
CE2s
=
V
IH
t
CYCLE
=
10 MHz
50
mA
I
CC2
s
SRAM V
CC
Active Current
CE1s
=
0.2 V,
CE2s
=
V
CC
s
0.2 V
t
CYCLE
=
10 MHz
t
CYCLE
=
1 MHz
40
mA
8
mA
I
SB1
f
Flash V
CC
Standby Current
V
CC
f
=
V
CC
Max., CEf
=
V
CC
f
±
0.3 V
RESET
=
V
CC
f
±
0.3 V,
WP/ACC
=
V
CC
f
±
0.3 V
V
CC
f
=
V
CC
Max., RESET
=
V
SS
±
0.3 V,
WP/ACC
=
V
CC
f
±
0.3 V
V
CC
f
=
V
CC
Max., CEf
=
V
SS
±
0.3 V
RESET
=
V
CC
f
±
0.3 V,
WP/ACC
=
V
CC
f
±
0.3 V
V
IN
=
V
CC
f
±
0.3 V or V
SS
±
0.3 V
1
5
μ
A
I
SB2
f
Flash V
CC
Standby Current
(RESET)
1
5
μ
A
I
SB3
f
Flash V
CC
Current
(Automatic Sleep Mode)
(Note 3)
1
5
μ
A
I
SB1
s
SRAM V
CC
Standby Current CE1s
V
CC
s
0.2 V, CE2s
V
CC
s
0.2 V
SRAM V
CC
Standby Current CE2s
0.2 V
0.2
7
μ
A
μ
A
I
SB2
s
0.2
7
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