參數(shù)資料
型號: MB84VD21081-85-PBS
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA61
封裝: PLASTIC, FBGA-61
文件頁數(shù): 46/55頁
文件大?。?/td> 850K
代理商: MB84VD21081-85-PBS
MB84VD2108X
-85
/MB84VD2109X
-85
46
Write Cycle (Note 3) (WE control) (SRAM)
t
WC
t
AS
t
WP
t
WR
t
AW
t
CW
t
CW
t
BW
t
ODW
t
DS
t
DH
t
OEW
Addresses
WE
LBs, UBs
CE1s
CE2s
D
OUT
D
IN
Note 1
Note 2
Note 4
Note 4
VALID DATA IN
Notes : 1.If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
output will remain at high impedance.
2.If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
output will remain at high impedance.
3.If OE is HIGH during the write cycle, the outputs will remain at high impedance.
4.Because I/O signals may be in the output state at this time, input signals of reverse
polarity must not be applied.
相關PDF資料
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MB84VD21081-85-PTS 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
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