參數(shù)資料
型號： MB84VD2009-10
廠商： FUJITSU LTD
元件分類： 存儲器
英文描述： 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA48
封裝： PLASTIC, BGA-48
文件頁數(shù)： 27/30頁
文件大?。?/td> 393K
代理商： MB84VD2009-10
27
MB84VD2008
-10
/MB84VD2009
-10
I
ERASE AND PROGRAMMING PERFORMANCE
(Flash)
I
DATA RETENTION CHARACTERISTICS
(SRAM)
* : 5
μ
A (Max.) at T
A
= –20°C to +40°C
CE1s Controlled Data Retention Mode
Notes:1.)
When CEs is operating at the V
IH
min. level (2.2 V), the standby current is given by I
SB1
s during the
transition of V
CC
s from 3.6 to 2.2 V.
Parameter
Limits
Unit
Comment
Min.
Typ.
Max.
Sector Erase Time
—
1
10
sec
Excludes programming time
prior to erasure
Byte Programming Time
—
8
300
μ
s
Excludes system-level
overhead
Word Programming Time
—
16
360
μ
s
Chip Programming Time
—
8.4
TBD
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycles
Parameter
Symbol
Parameter Description
Min.
Typ.
Max.
Unit
V
DH
Data Retention Supply Voltage
2.0
—
3.6
V
I
DDS2
Standby Current
V
DH
= 3.0 V
—
—
50*
μ
A
t
CDR
Chip Deselect to Data Retention Mode Time
0
—
—
ns
t
R
Recovery Time
5
—
—
ms
V
CC
s
2.7 V
V
IH
GND
DATA RETENTION MODE
See Note 1
t
CDR
CEs
V
CCS
–0.2 V
See Note 1
t
R
相關(guān)PDF資料
PDF描述
MB84VD2008 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2009 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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