參數(shù)資料
型號: MB84VB2001-10
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: PT 8C 8#20 PIN RECP
中文描述: 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 1/28頁
文件大?。?/td> 314K
代理商: MB84VB2001-10
DS05-50102-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
MCP (Multi-Chip Package) FLASH MEMORY
CMOS
8M (
×
8/
×
16) FLASH MEMORY &
8M (
×
8/
×
16) FLASH MEMORY
MB84VB2000
-10
/MB84VB2001
-10
I
FEATURES
Contain 2 chips of MBM29LV800A, and each chip have separate CE.
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–40 to +85
°
C
Minimum 100,000 write/erase cycles
Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes
×
2 chips
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VB2000: Top sector
MB84VB2001: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Please refer to "MBM29LV800TA/BA" data sheet in detailed function
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