參數(shù)資料
型號(hào): MB84VA2107
廠商: Fujitsu Limited
英文描述: 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
中文描述: 1,600(x16)的快閃記憶體
文件頁(yè)數(shù): 25/29頁(yè)
文件大小: 423K
代理商: MB84VA2107
25
MB84VA2106
-10
/MB84VA2107
-10
Write Cycle (Note 4) (CE2s Control) (SRAM)
t
WC
t
AS
t
WP
t
WR
t
CW
t
ODW
t
COE
t
DS
t
DH
VALID DATA IN
ADDRESSES
WE
CE1s
D
OUT
D
IN
CE2s
Notes:
2.If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
output will remain at high impedance.
3.If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
output will remain at high impedance.
4.If OE is HIGH during the write cycle, the outputs will remain at high impedance.
5.Because I/O signals may be in the output state at this Time, input signals of reverse
polarity must not be applied.
Note 5
Note 5
t
CW
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