參數(shù)資料
型號: MB84VA2107-10
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 17/29頁
文件大?。?/td> 423K
代理商: MB84VA2107-10
17
MB84VA2106
-10
/MB84VA2107
-10
Write Cycle (CEf control) (Flash)
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
DQ
t
AS
t
CPH
t
DH
DQ
7
A0H
D
OUT
CEf
555H
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
ADDRESSES
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